Infineon IPD036N04L: High-Performance 40 V OptiMOS Power MOSFET for Automotive Applications
The relentless drive towards more efficient, powerful, and reliable automotive systems demands components that meet the highest standards of performance and durability. At the heart of many of these advancements—from electric power steering and braking to DC-DC converters and battery management—lies the power MOSFET. The Infineon IPD036N04L G, a 40 V OptiMOS power MOSFET, stands out as a premier solution engineered specifically for the rigorous demands of the automotive industry.
This device is built upon Infineon’s advanced OptiMOS technology, a platform renowned for its exceptional efficiency and power density. A key metric for any power switch is its on-state resistance, which directly impacts conduction losses and overall system efficiency. The IPD036N04L boasts an extremely low typical on-state resistance (RDS(on)) of just 3.6 mΩ at a gate-source voltage of 10 V. This remarkably low resistance ensures minimal power is wasted as heat, leading to cooler operation and higher efficiency, which is paramount for extending the range of electric vehicles and reducing fuel consumption in conventional cars.
Beyond raw performance, qualification for automotive use is non-negotiable. The IPD036N04L is AEC-Q101 qualified, guaranteeing that it has passed a stringent set of stress tests designed to ensure reliability under the extreme conditions encountered in automotive environments. This includes exceptional performance over a wide junction temperature range from -55 °C to 175 °C, making it capable of handling the intense heat under the hood as well as frigid cold starts.
The device also features outstanding switching performance, which allows for higher frequency operation in switch-mode power supplies. This capability enables designers to reduce the size of passive components like inductors and capacitors, leading to more compact and lighter electronic control units (ECUs). Furthermore, its high robustness against avalanche and commutation events enhances the overall reliability and longevity of the application, protecting against voltage spikes and other transient events common in automotive electrical systems.
Housed in a space-efficient PG-TO263-3 (D2PAK) package, the IPD036N04L offers an excellent balance between power handling and footprint, which is crucial in the space-constrained confines of modern vehicles.
ICGOOODFIND: The Infineon IPD036N04L is a top-tier 40 V power MOSFET that delivers a powerful combination of ultra-low RDS(on), high-temperature operation, and proven automotive-grade reliability (AEC-Q101). It is an optimal choice for designers seeking to maximize efficiency and power density in demanding 12 V and 24 V automotive applications.
Keywords: Automotive MOSFET, Low RDS(on), AEC-Q101 Qualified, OptiMOS Technology, High Temperature Operation.
