Infineon IPZ40N04S55R4ATMA1 40V OptiMOS Power MOSFET for High-Efficiency Power Conversion

The demand for higher efficiency and greater power density in modern electronic systems continues to drive innovation in power semiconductor technology. Addressing this need, the Infineon IPZ40N04S55R4ATMA1 40V OptiMOS Power MOSFET stands out as a critical component optimized for high-performance power conversion applications. Combining low on-state resistance, superior switching characteristics, and enhanced thermal management, this MOSFET is engineered to maximize efficiency and reliability in demanding environments.

A key feature of the IPZ40N04S55R4ATMA1 is its exceptionally low RDS(on) of 0.55 mΩ, which significantly reduces conduction losses. This ultra-low resistance allows the device to handle high current levels with minimal power dissipation, making it ideal for applications such as DC-DC converters, motor drives, and synchronous rectification in switch-mode power supplies (SMPS). The reduced power loss not only improves overall system efficiency but also alleviates thermal stress, contributing to longer operational life and higher reliability.

The MOSFET is built on Infineon’s advanced OptiMOS technology, which offers best-in-class switching performance. The low gate charge (Qg) and figure of merit (FOM) ensure fast switching transitions, reducing switching losses especially in high-frequency circuits. This is particularly beneficial in modern power supplies where higher switching frequencies enable the use of smaller passive components, leading to more compact and lightweight designs.

Thermal performance is further enhanced through optimized package design. The device is available in a SuperSO8 package that provides improved heat dissipation and power cycling capability. This allows designers to push the limits of power density without compromising thermal management.

In applications such as server power supplies, industrial automation, and automotive systems, the IPZ40N04S55R4ATMA1 helps achieve energy efficiency targets and compliance with international standards. Its robustness and performance also make it suitable for battery management systems and low-voltage drive applications.

ICGOOODFIND:

The Infineon IPZ40N04S55R4ATMA1 40V OptiMOS Power MOSFET sets a high standard for efficiency and performance in power conversion. With industry-leading RDS(on), excellent switching behavior, and superior thermal characteristics, it is an optimal choice for next-generation power designs.

---

Keywords:

Power MOSFET, High-Efficiency, Low RDS(on), OptiMOS Technology, Thermal Performance