Infineon BC807UE6327HTSA1 PNP Transistor: Datasheet, Application Circuit, and SOT-323 Package Analysis
The Infineon BC807UE6327HTSA1 is a general-purpose PNP bipolar junction transistor (BJT) designed for a wide range of amplification and switching applications. As part of Infineon's robust portfolio of small-signal transistors, this component is characterized by its high current gain, low saturation voltage, and compact form factor, making it an ideal choice for modern, space-constrained electronic designs.
A thorough review of the datasheet reveals the key electrical characteristics that define this component. The BC807UE6327HTSA1 has a collector-emitter voltage (VCEO) of -45V and a continuous collector current (IC) of -500mA, providing sufficient headroom for many low-power circuits. Its DC current gain (hFE) is notably high, ranging from 160 to 450 at a collector current of 100mA, which ensures excellent signal amplification with minimal base current drive. Furthermore, the transistor exhibits a low collector-emitter saturation voltage (VCE(sat)), typically around -0.7V at IC = -500mA, which is critical for efficient switching operations as it minimizes power loss and heat generation in the on-state.
The device is offered in the ultra-small SOT-323 surface-mount package. This package is a cornerstone of its design utility, measuring only approximately 2.0 x 1.25 x 0.95 mm. The SOT-323's miniature footprint allows for high-density PCB mounting, which is essential in portable consumer electronics such as smartphones, wearables, and IoT modules. Despite its small size, the package provides adequate thermal and electrical performance for the transistor's power dissipation rating of 330mW. Engineers must pay careful attention to PCB layout and soldering techniques to manage heat dissipation and avoid issues like tombstoning during reflow processes.
A common application circuit for the BC807UE6327HTSA1 is as a low-side switch, a fundamental configuration for controlling loads like LEDs, motors, or relays. In this setup, the emitter is connected to the positive supply rail (VCC), the load is placed between the collector and ground, and a control signal (e.g., from a microcontroller) is fed to the base through a current-limiting resistor. To ensure the transistor saturates fully (turns on hard), the base resistor value must be calculated correctly based on the required collector current and the transistor's hFE. For instance, to switch a 100mA load with an hFE of 250, a base current of 0.4mA is sufficient. A typical base resistor value (RB) can be calculated using the formula RB = (VCTRL - VBE) / IB, where VCTRL is the microcontroller output voltage (e.g., 3.3V) and VBE is approximately -0.7V. A small-value resistor (e.g., 1kΩ) is often placed between the emitter and base as a pull-up to ensure definitive turn-off.
ICGOODFIND: The Infineon BC807UE6327HTSA1 stands out as a highly reliable and efficient PNP transistor, perfectly balancing electrical performance with the physical demands of modern electronics. Its high current gain and low VCE(sat) make it exceptionally efficient for both amplification and switching duties, while its SOT-323 package is indispensable for designing compact and powerful devices. This transistor is a superior choice for designers seeking a proven solution for power management and signal control in a miniature format.
Keywords: PNP Transistor, SOT-323 Package, Low Saturation Voltage, High Current Gain, Switching Application.
