Infineon BFR182WH6327 NPN RF Transistor Datasheet and Application Notes
The Infineon BFR182WH6327 is a high-frequency NPN bipolar junction transistor (BJT) specifically engineered for very high-frequency (VHF) and ultra-high-frequency (UHF) applications. Housed in a compact SOT-343 (SC-70) surface-mount package, this device is a cornerstone in the design of modern RF circuits where minimal board space and superior performance are paramount.
Key Electrical Characteristics and Features
A thorough review of the datasheet reveals the transistor's optimized design for small-signal amplification. Its standout feature is its transition frequency (fT) of 8 GHz, which defines the upper frequency limit where the transistor can effectively amplify a signal. This makes it exceptionally suitable for applications operating in the several hundred MHz to low GHz range.
Other critical parameters from the datasheet include:
Low Noise Figure: Typically 1.8 dB at 900 MHz, which is crucial for receiving stages where signal integrity is vital.
High Gain: Offers a high gain-bandwidth product, providing significant signal amplification at target frequencies.
Collector-Emitter Voltage (VCEO): 12 V, defining its operating voltage range.
Collector Current (IC): A maximum of 50 mA, classifying it as a small-signal device.
The SOT-343 package is not only small but also designed for excellent high-frequency performance, with low lead inductance and parasitic effects that could otherwise degrade RF performance.
Primary Applications and Circuit Design Notes
The BFR182WH6327 excels in a variety of RF front-end stages. Key applications, as detailed in application notes, include:
VHF/UHF Amplifiers: Serving as a robust low-noise amplifier (LNA) in receiver paths for applications like land mobile radio, amateur radio, and data links.
Oscillator Circuits: Its high fT ensures stable performance in local oscillator (LO) and voltage-controlled oscillator (VCO) designs.
Driver Amplifier Stages: Providing the necessary gain to drive subsequent power amplifier stages in transmitter chains.
Cellular Infrastructure: Found in subsystems for base stations and repeaters, particularly for lower-power amplification needs.
When designing with this transistor, application notes emphasize several best practices:
1. Proper RF Layout: Implementing a solid RF ground plane, using short and direct trace lengths, and proper decoupling are non-negotiable for achieving datasheet performance.
2. Biasing: The transistor requires stable DC bias conditions. A common-emitter configuration with resistive biasing or a current mirror is typical. Thermal stability must be considered.
3. Impedance Matching: Input and output matching networks are critical to maximize power transfer and minimize reflections. These are typically designed using microstrip lines and matching components (inductors, capacitors) based on the target frequency.
4. ESD Protection: As with most RF devices, the BFR182WH6327 is sensitive to electrostatic discharge (ESD). Standard ESD handling precautions must be strictly followed during assembly.
ICGOOODFIND Summary
The Infineon BFR182WH6327 is a highly capable NPN RF transistor that delivers a compelling combination of high-frequency performance, low noise, and gain in a miniature package. Its well-documented characteristics make it a reliable and popular choice for designers working on amplifiers and oscillators within the VHF and UHF spectrum. For optimal results, careful attention to RF PCB layout and biasing is essential to fully leverage its performance potential.
Keywords: NPN RF Transistor, Low-Noise Amplifier (LNA), High Frequency (VHF/UHF), SOT-343 Package, Transition Frequency (fT).
