Infineon IKP30N65H5: A 650 V Superjunction MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power semiconductor components. Addressing these challenges, Infineon Technologies has developed the IKP30N65H5, a 650 V superjunction (SJ) MOSFET that stands as a cornerstone for advanced power conversion designs. This device leverages Infineon's proven CoolMOS™ technology to deliver an exceptional blend of high performance, robustness, and reliability, making it an ideal choice for a wide array of demanding applications.

At the heart of the IKP30N65H5's superior performance is its superjunction structure. This technology represents a significant departure from traditional planar MOSFET designs. By employing a deeply etched pillar structure, it enables a much higher doping of the drift region. This innovation drastically reduces the device's on-state resistance (RDS(on)) for a given silicon area. The result is a remarkably low RDS(on) of just 30 mΩ (max), which directly translates to minimized conduction losses. When a switch is conducting current, lower resistance means less power is wasted as heat, a fundamental factor in achieving higher overall system efficiency.

Beyond conduction losses, switching losses are a critical factor, especially in high-frequency switch-mode power supplies (SMPS). The IKP30N65H5 exhibits excellent switching characteristics, including low gate charge (Qg) and small output capacitance (Coss). These parameters are crucial as they determine the energy required to turn the device on and off. The optimized internal design ensures fast and clean switching behavior, which minimizes switching losses and electromagnetic interference (EMI). This allows designers to push switching frequencies higher, enabling the use of smaller passive components like transformers and capacitors, thereby increasing power density.

The device's 650 V voltage rating provides a comfortable safety margin for operations in universal mains applications (85 V AC to 305 V AC) and power factor correction (PFC) stages. This robust voltage capability ensures enhanced resilience against line transients and spikes, contributing to the overall longevity and field reliability of the end product. Furthermore, the MOSFET features a strong avalanche ruggedness, meaning it can withstand a certain amount of unclamped inductive switching (UIS) energy, a common stress event in real-world circuits.

Typical applications for the IKP30N65H5 are extensive and include:

Server & Telecom Power Supplies (SMPS): Where efficiency metrics like 80 Plus Titanium are mandatory.

Industrial Power Systems: For motor drives, welding equipment, and automation systems.

Power Factor Correction (PFC) Boost Stages: Both in interleaved and single-stage designs.

Solar Inverters and UPS: Requiring high efficiency and durability.

Lighting: High-performance LED driving applications.

ICGOODFIND: The Infineon IKP30N65H5 is a high-efficiency superjunction MOSFET that sets a high bar for performance in power conversion. Its optimal balance of extremely low on-resistance and superior switching dynamics makes it a pivotal component for designers aiming to maximize efficiency, increase power density, and build more reliable next-generation power electronics.

Keywords:

Superjunction MOSFET

High-Efficiency

Low RDS(on)

Power Conversion

Avalanche Ruggedness