Infineon BSL215CH6327: A High-Performance Dual N-Channel MOSFET in a Compact SSOP-8 Package

Power management efficiency is a critical design parameter in modern electronic applications, from portable consumer devices to automotive systems. The Infineon BSL215CH6327 addresses this need by integrating two high-performance N-channel enhancement mode MOSFETs into a single, space-saving SSOP-8 package. This innovative configuration offers designers a powerful solution for optimizing board space and enhancing thermal performance without compromising on electrical characteristics.

Engineered with Infineon’s advanced OptiMOS™ technology, the BSL215CH6327 delivers exceptional low on-state resistance (R DS(on)) of just 25 mΩ (max.) per channel at 10 V. This key feature is instrumental in minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation. The low threshold voltage (V GS(th)), typically 1.35 V, further ensures excellent performance in low-voltage drive scenarios, making it highly suitable for power management in battery-operated devices.

The compact SSOP-8 (Shrink Small Outline Package) footprint is a significant advantage. It allows for a dramatically reduced PCB area compared to using two discrete MOSFETs in larger packages. This integration is crucial for the ongoing trend of product miniaturization. Furthermore, the package is designed for superior thermal performance, enabling effective heat dissipation and supporting reliable operation under continuous load conditions.

A primary application for this dual MOSFET is in load switching and power management circuits. Its common-drain configuration makes it an ideal choice for DC-DC converter subsystems, motor control circuits, and battery protection modules. The device’s ability to handle a continuous drain current (I D) of up to 4.3 A per MOSFET and its robust design for automotive qualification also make it a reliable component for automotive applications, adhering to the stringent AEC-Q101 standard.

In summary, the Infineon BSL215CH6327 stands out as a superior component that combines high electrical efficiency, robust thermal management, and significant space savings.

ICGOODFIND: The Infineon BSL215CH6327 is a highly integrated dual N-channel MOSFET that exemplifies the perfect balance of performance and miniaturization, making it an optimal choice for efficient, space-constrained power design.

Keywords: Dual N-Channel MOSFET, Low R DS(on), SSOP-8 Package, Power Management, OptiMOS™ Technology