High-Power Density and Efficiency of the Infineon BSM75GD120DN2 IGBT Module
The relentless pursuit of higher efficiency and power density in power electronics is driven by applications ranging from industrial motor drives and renewable energy systems to electric vehicle powertrains. At the forefront of this innovation is the Infineon BSM75GD120DN2, an IGBT module that exemplifies the successful integration of high performance within a compact footprint. This module sets a benchmark by achieving an exceptional balance of low power losses and high power density, a critical requirement for modern, space-constrained designs.
A key factor behind its superior performance is the advanced Trenchstop™ IGBT7 technology. This latest generation IGBT chip technology significantly reduces both saturation voltage (VCE(sat)) and switching losses (Eoff) compared to previous generations. The result is a remarkable boost in overall system efficiency, particularly at high switching frequencies. This allows designers to either increase the power rating of their systems or reduce the size of cooling components, directly contributing to higher power density.
Furthermore, the module incorporates a robust and low-induance package design. The optimized internal layout minimizes parasitic inductance, which is crucial for suppressing voltage overshoot during fast switching events. This enhances the module's reliability and allows it to operate safely at its maximum performance limits. The use of EDT2 diode technology in the antiparallel diode ensures excellent softness during reverse recovery, further reducing switching losses and electromagnetic interference (EMI).
The practical benefits of these technological advancements are substantial. For instance, in a solar inverter application, the reduced switching losses of the BSM75GD120DN2 translate directly into higher conversion efficiency, maximizing energy harvest. In an industrial motor drive, the high power density enables the creation of more compact and powerful variable frequency drives (VFDs), saving valuable panel space. The module's high current capability of 75A and voltage rating of 1200V make it exceptionally versatile for a wide array of high-power applications.
ICGOODFIND: The Infineon BSM75GD120DN2 IGBT module stands as a pinnacle of power semiconductor design, masterfully combining the cutting-edge Trenchstop™ IGBT7 and EDT2 diode technologies to achieve unprecedented levels of efficiency and power density. It is an optimal solution for engineers aiming to push the boundaries of performance while minimizing the size and thermal management overhead of their power conversion systems.
Keywords: IGBT7 Technology, Power Density, Switching Losses, High Efficiency, Trenchstop™
